<?xml version="1.0" encoding="UTF-8"?><rss version="2.0"><channel><title><![CDATA[Teledyne e2v HiRel 보도자료 - 뉴스와이어]]></title><link>https://www.newswire.co.kr/?md=A10&amp;act=article&amp;no=36775></link><description><![CDATA[Teledyne e2v HiRel 보도자료 - 뉴스와이어 RSS 서비스]]></description><lastBuildDate>Thu, 23 Apr 2026 16:59:56 +0900</lastBuildDate><copyright>Copyright (c) 2004~2026 Korea Newswire All rights reserved</copyright><image><url><![CDATA[https://file.newswire.co.kr/data/upfile/company_img/2021/01/12_3554238800_20210107100007_5779079059.jpg]]></url></image><language>ko-KR</language><item><title><![CDATA[Teledyne e2v HiRel Unveils Two High Power GaN HEMTs to its 650 V Family]]></title><link>https://www.newswire.co.kr/newsRead.php?no=916923</link><description><![CDATA[MILPITAS, Calif.--(Business Wire/Korea Newswire)--Teledyne e2v HiRel is adding two new, ruggedized GaN power HEMTs (High Electron Mobility Transistors) to its industry-leading, 650-volt, high-power family of products based on GaN Systems technology.  The two new high-power HEMTs, TDG650E30B and TDG650E15B, deliver lower current performance of 30- and 15-amp respectively, while the original 650 ...]]></description><pubDate>Thu, 07 Jan 2021 14:50:00 +0900</pubDate></item><item><title><![CDATA[Teledyne e2v HiRel, 새로운 650V 고전력 GaN HEMT 2종 출시]]></title><link>https://www.newswire.co.kr/newsRead.php?no=916925</link><description><![CDATA[밀피타스, 캘리포니아--(Business Wire/뉴스와이어)--Teledyne e2v HiRel이 GaN 시스템즈(GaN Systems)의 기술을 기반으로 한 고전력 650V 제품군에 러기다이즈드(ruggedized, 열악한 환경에서도 우수한 내구성 발휘) GaN 전력 HEMT(High Electron Mobility Transistor, 고전자 이동도 트랜지스터) 2종을 추가했다.    새로운 고전력 HEMT인 TDG650E30B와 TDG650E15B는 2020년 선보인 650V HEMT(60A)보다 낮은 30A, 15A의 전류 ...]]></description><image><url><![CDATA[https://file.newswire.co.kr/data/datafile2/thumb/2021/01/3554238800_20210107144046_3425908013.jpg]]></url></image><pubDate>Thu, 07 Jan 2021 14:50:00 +0900</pubDate></item></channel></rss>