Faraday Broadens IP Offerings on UMC’s 14nm Process for Edge AI and Consumer Markets
Faraday continues building out its IP solutions on UMC’s 14nm node. All these IPs are silicon-proven to ensure production-quality, significantly reducing design risk while assisting designers in shortening development cycles and effectively managing design and manufacturing costs. For edge AI applications, Faraday’s fabless OSAT Service provides advanced 2.5D/3D packaging options, including memory controller and I/O integration, to meet the high-bandwidth and capacity requirements of AI computing and further enhance overall system-performance.
“With decades of IP development and ASIC design experience, Faraday continues investing in expanding its IP offerings to address diverse customer requirements,” said Flash Lin, Chief Operating Officer of Faraday. “By combining a robust, silicon-proven IP portfolio with deep ASIC-design expertise, Faraday helps customers transition to the FinFET platform and leverage the advantages of ASIC solutions in AI applications.”
About Faraday Technology Corporation
Faraday Technology Corporation (TWSE: 3035) is dedicated to the mission of benefiting humanity and upholding sustainable values in every IC it handles. The company offers a comprehensive range of ASIC solutions, including 2.5D/3D Advanced packaging, Arm Cortex-A, R, M, A720AE, Neoverse CSS integration and hardening, FPGA-Go-ASIC, and design implementation services. Furthermore, its extensive silicon IP portfolio encompasses a wide array of offerings, such as I/O, Cell Library, Memory Compiler, DDR/LPDDR, MIPI D-PHY, V-by-One, USB, Giga Ethernet, SATA, PCIe, and SerDes. For further information, visit www.faraday-tech.com or follow Faraday on LinkedIn.
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Website: http://www.faraday-tech.com
Contact
Faraday Technology Corporation
Evan Ke
+886.3.578.7888 ext. 88689
evan@faraday-tech.com
This news is a press release provided by Faraday Technology Corporation.
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