Toshiba Launches 3300V SiC MOSFET Module with High Surge Current Capability that Helps Improve Reliability of Industrial Equipment
Sep. 27, 2026 13:30
IX800FXF2YMS4 has an optimized SiC chip design and delivers an I2t characteristic of 300kA2s[1], an indicator of the diode section’s surge current capability under abnormal conditions.
The module has a drain-source on-voltage (sense) (VDS(on)sense) of 1.4V (typ.)[2], which helps reduce conduction losses. Its turn-on switching loss (Eon) of 185mJ (typ.)[3] and turn-off switching loss (Eoff) of 175mJ (typ.)[3] help reduce switching losses. These characteristics contribute to improved equipment reliability and efficiency, and to smaller cooling systems.
The new product adopts the iXPLV™ package[4], which offers excellent mounting compatibility. It uses silver sintering bonding technology to improve the heat resistance and reliability of bonded sections with SiC chips, achieving the 175°C channel temperature rating required for industrial equipment.
This new addition to Toshiba’s lineup brings the number of SiC MOSFET modules in the iXPLV™ package to four, broadening the range of available product options.
Toshiba will continue to expand its lineup of SiC MOSFET modules for industrial equipment and provide a wider range of product options that meet diverse equipment specifications and applications. The company will also contribute to more reliable, efficient and compact industrial equipment.
Notes:
[1] Test conditions: Tch(initial)=175°C, VGS=-6V, half sine-wave 10ms 1pulse, F.R.=1%
[2] Test conditions: ID=800A, VGS=+20V, Tch=25°C
[3] Test conditions: VDD=1800V, ID=800A, VGS=+20V/-6V, Cgs=100nF, RG(on)=1.2Ω, RG(off)=1.2Ω, Tch=175°C, LS≃70nH
[4] iXPLVTM: Abbreviation for intelligent fleXible Package Low Voltage
Applications
Industrial equipment
· Railway traction inverters and converters
· Renewable energy power generation systems
· Power conversion systems (solid-state transformers (SST)[5]; uninterruptible power supplies (UPS); energy storage systems (ESS), etc.)
· Industrial motor control equipment, etc.
Note:
[5] SST: A next-generation transformer that utilizes power semiconductors to achieve compact size, highly efficient voltage conversion, and advanced power control.
Features
· Specifies I2t limit value (Diode) rating: I2t=300kA2s
· Low drain-source on-voltage (sense): VDS(on)sense=1.4V (typ.)
· Low switching loss: Eon=185mJ (typ.), Eoff=175mJ (typ.)
· Channel temperature rating: Tch=175°C
· Adopts the iXPLVTM package.
Main Specifications
(To view the table, please visit https://www.businesswire.com/news/home/20260923706775/en/)
Follow the link below for more on the new product.
[IX800FXF2YMS4]()
Follow the link below for more on Toshiba’s SiC power device lineup.
[SiC Power Devices]()
* iXPLV™ is a trademark of Toshiba Electronic Devices & Storage Corporation.
* Other company names, product names, and service names may be trademarks of their respective companies.
* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.
About Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products.
Its 17,400 employees around the world share a determination to maximize product value, and to promote close collaboration with customers in the co-creation of value and new markets. The company looks forward to building and to contributing to a better future for people everywhere.
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Contact
Toshiba Electronic Devices & Storage Corporation
Customer Inquiries:
Power & Small Signal Device Sales & Marketing Dept.
+81-44-548-2216
Media Inquiries:
C. Nagasawa
Communications & Market Intelligence Dept.
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