DRAMeXchange sees DRAM spot price rebound while DDR2 eTT reaches a sequential gain of 29.4%

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2007-06-20 18:50

Taiwan--(뉴스와이어)--DRAMeXchange observes DRAM spot price rebound last week channels… pre stock activities amid smuggle-fighting measures in China, as well as prolonged cycle time on 70nm output.

DDR2 eTT part saw a sequential gain of 29.4% and closed at US$2.07 on June 20, while branded 512Mb DDR2 64M*8 also saw a mild growth to US$2.06 in the same period. The magnitude of DDR2 eTT price up has already marked a crossover with branded chips, implying that branded chip prices are likely to be spurred up later.

Some channel distributors in Shenzhen, who aggressively pre stock amid the smuggling-fighting measures in southern China, is one of the major causes for the price rebound. Since China imposes 17% VAT on imported goods, some China-based channel distributors often smuggle DRAM chips from Hong Kong in order to avoid the VAT cost. Yet, the strict smuggling-fighting measures recently prompted them to aggressively source DRAM chips from spot market under shortage concern, thus boosting prices accordingly.

Prolonged production cycle time when transiting to 70nm production is the other reason for the price rebound. DRAMeXchange sees the prolonged production cycle time among Taiwan DRAM makers is reflected in May and June…s reduced output. Although the impact over volume is not critical, industry players are still concern about potential output cut at spot market, given that Taiwan chipmakers mostly supply their parts to the spot market. We expect seeing a smoothen transition on 70nm among Taiwan makers in July and August.

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