Samsung Develops Mobile DRAM with Wide I/O Interface

뉴스 제공

삼성전자 코스피 005930

2011-02-21 11:15

SEOUL--(뉴스와이어)--Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced the development of 1 gigabit (Gb) mobile DRAM with a wide I/O interface, using 50 nanometer class* process technology. The new wide I/O mobile DRAM It will be used in mobile applications, such as smartphones and tablet PCs.

“Following the development of 4Gb LPDDR2 DRAM (low-power DDR2 dynamic random access memory) last year, our new mobile DRAM solution with a wide I/O interface represents a significant contribution to the advancementdevelopment of high-performance mobile products,” said Byungse So, senior vice president, memory product planning & application engineering at Samsung Electronics. “We will continue to aggressively expand our high-performance mobile memory product line in a determined effort to further propel the growth of the mobile industry.”

The new 1Gb wide I/O mobile DRAM can transmit data at 12.8 gigabyte (GB) per second, which increases the bandwidth of mobileM DDR DRAM (1.6GB/s) eightfold, while reducing power consumptions by approximately 87 percent. The bandwidth is also four times that of LPDDR2 DRAM (which is approximatelyabout 3.2GB/s).

To boost data transmission, Samsung’s wide I/O DRAM uses 512 pins for data input and output compared to the previous generation of mobile DRAMs, which used a maximum of 32 pins. If you include the other pins that are involved in sending commands and regulating power supply, a single Samsung wide I/O DRAM is designed to accommodate approximatelyabout 1,200 pins.

Following this wide I/O DRAM launch, Samsung is aiming to provide 20nm-class* 4Gb wide I/O mobile DRAM sometime in 2013. The company’s recent achievements in mobile DRAM include introducing the first rolled out 50nm-class 1Gb LPDDR2 DRAM in 2009 and the first 40nm-class* 2Gb LPDDR2 in 2010.

Samsung will present a paper related to wide I/O DRAM technology at the 2011 International Solid-State Circuits Conference (ISSCC) being held from February 20 to 24 in San Francisco.

According to iSuppli, mobile DRAM’s percentage of total annual DRAM shipments will increase from about 11.1 percent in 2010 to 16.5 percent in 2014.

삼성전자 개요
삼성전자는 반도체, 통신, 디지털 미디어와 디지털 컨버전스 기술을 보유한 글로벌 리더다. 삼성전자는 디지털 어플라이언스 부문, 디지털 미디어 부문, LCD 부분, 반도체 부문, 통신 네트워크 부문 등 5개 부문으로 이뤄져 있다. 세계에서 가장 빠르게 성장하는 브랜드인 삼성전자는 스마트폰, 디지털 TV, 메모리 반도체, OLED, TFT-LCD 분야에서 세계 선두 주자다.

웹사이트: http://www.samsung.com/sec