Transphorm Wins $15 Million Contract from the National Security Technology Accelerator
ECLIPSE Project Aims to Establish Production and Supply of Advanced GaN Epiwafer Materials; Marks Repeat Government Contract Awarded to Transphorm for Technology Development
Transphorm’s experience in GaN epiwafer design, development, and production of various breakthrough high voltage GaN platforms spans more than ten years. These initiatives constitute multiple verticals for the semiconductor pioneer’s Power and RF GaN businesses.
“Inarguably, the value of and potential for advanced GaN materials is clear in a wide range of applications. We’ve developed multiple high power density platforms that generate record performance and efficiency advantages suited for power conversion and RF applications,” said Umesh Mishra, CTO and Co-founder, Transphorm. “This type of innovation is where Transphorm excels because of its strong core epi materials versatility coupled with its device and manufacturing capabilities. We’ve worked to evolve and better all GaN technology aspects —materials, design, and process. We now look forward to strong execution on the ECLIPSE program, enhancing our capability to supply advanced GaN epiwafers.”
The contract proposal process was administered by the National Security Technology Accelerator (NSTXL) as an OTA (Other Transaction Agreement).
About Transphorm
Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company’s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm’s innovations move power electronics beyond the limitations of silicon to achieve over 99% efficiency, 50% more power density and 20% lower system cost. Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan. For more information, please visit www.transphormusa.com. Follow us on Twitter @transphormusa and WeChat @ Transphorm_GaN.
View source version on businesswire.com: https://www.businesswire.com/news/home/20230523005460/en/
Website: http://www.transphormusa.com/
Contact
Transphorm, Inc.
Press Contact
Heather Ailara
+1.973.567.6040
heather.ailara@transphormusa.com
Investor Contacts
KCSA Strategic Communications
David Hanover or Jack Perkins
transphorm@kcsa.com
This news is a press release provided by Transphorm, Inc.. Korea Newswire follows these editorial guidelines.