Toshiba Develops Industry’s First 2200V Dual Silicon Carbide(SiC) MOSFET Module That Contributes to High Efficiency and Downsizing of Industrial Equipment
MG250YD2YMS3 offers low conduction loss with a low drain-source on-voltage (sense) of 0.7V (typ.). It also offers lower turn-on and turn-off switching loss of 14mJ (typ.) and 11mJ (typ.) respectively, an approximately 90% reduction against a typical silicon (Si) IGBT. These characteristics contribute to higher equipment efficiency. Realizing low switching loss also allows the conventional three-level circuit to be replaced with a two-level circuit with a lower module count, contributing to equipment miniaturization.
Toshiba will continue to meet the market needs for high efficiency and the downsizing of industrial equipment.
 Among dual SiC MOSFET modules. Toshiba survey, as of August 2023.
 Test condition: ID=250A, VGS=+20V, Tch=25°C
 Test condition: VDD=1100V, ID=250A, Tch=150°C
 Toshiba comparison of switching loss for a 2300V Si module and MG250YD2YMS3, the new all SiC MOSFET module, as of August 2023 (performance values for the 2300V Si module is a Toshiba estimate based on papers published in or before March 2023.)
- Renewable energy power generation systems (photovoltaic power systems, etc.)
- Energy storage systems
- Motor control equipment for industrial equipment
- High frequency DC-DC converter, etc.
· Low drain-source on-voltage (sense):
VDS(on)sense=0.7V (typ.) (ID=250A, VGS=+20V, Tch=25°C)
· Low turn-on switching loss:
Eon=14mJ (typ.) (VDD=1100V, ID=250A, Tch=150°C)
· Low turn-off switching loss:
Eoff=11mJ (typ.) (VDD=1100V, ID=250A, Tch=150°C)
· Low stray inductance:
(To view the table, please visit https://www.businesswire.com/news/home/20230828128640/en/)
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Toshiba Electronic Devices & Storage Corporation, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products.
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